MRF6V3090NR1 Datasheet, PDF (5/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

TYPICAL CHARACTERISTICS
1000
C_iss
100
C_oss
C_rss
Measured with ±30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc
10
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
24
70
V_DD = 50 Vdc, I_DQ = 350 mA, f = 860 MHz
23
60
G_ps
22
50
21
40
20
30
19
20
18
η_D
10
17
0
1
10
100 200
P_out, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Narrowband Test Circuit)
56
P3dB = 51.28 dBm (134.3 W)
Ideal
55
54
P2dB = 51.06 dBm (127.6 W)
53
P1dB = 50.7 dBm (117.5 W)
52
51
Actual
50
49
48
V_DD = 50 Vdc, I_DQ = 350 mA, f = 860 MHz
47
--6 --5 --4 --3 --2 --1 0 1 2 3 4
P_in, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Narrowband Test Circuit)
25
I_DQ = 350 mA, f = 860 MHz
24
23
22
21
20
19
18
50 V
45 V
17
V_DD = 40 V
16
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
P_out, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
(Narrowband Test Circuit)
25
V_DD = 50 Vdc, I_DQ = 350 mA, f = 860 MHz
24
23
G_ps
T_C = --30_C
22
21 85_C
25_C
η_D
20
70
T_C = --30_C
60
85_C ₅₀
25_C
40
30
20
19
10
18
0
1
10
100 200
P_out, OUTPUT POWER (WATTS)
Figure 8. CW Power Gain and Drain Efficiency versus
Output Power (Narrowband Test Circuit)
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
5