MRF6V3090NR1 Datasheet, PDF (11/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
24
60
V_DD = 50 Vdc, I_DQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
23
50
22
G_ps
P_out = 4.5 W ₄₀
9W
18 W
21
30
20
η_D
18 W
20
9W
19
10
4.5 W
18
0
450 500 550 600 650 700 750 800 850 900
f, FREQUENCY (MHz)
Figure 21. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
12
V_DD = 50 Vdc, I_DQ = 450 mA, DVB--T (8k OFDM)
11 ^{64 QAM Data Carrier Modulation, 5 Symbols}
10
9
8
PAR
7
0
--5
P_out = 4.5 W _--10
9 W _--15
--20
18 W
--25
6
IMD⁽¹⁾
5
--30
18 W
--35
9W
4
--40
4.5 W
3
--45
450 495 540 585 630 675 720 765 810 855 900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 22. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
26
V_DD = 50 Vdc, I_DQ = 450 mA
25 ^{Pulse Width = 100 μsec, 10% Duty Cycle}
24
23
620 MHz
G_ps
22 ^{740 MHz 860 MHz}
860 MHz
70
620 MHz
60
740
MHz 50
470 MHz
40
30
21 ^{470 MHz}
230
η_D
20
10
19
0
1
10
100 200
P_out, OUTPUT POWER (WATTS) PULSED
Figure 23. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
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