MRF6S9125NR1_06 Datasheet, PDF (8/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
22
70
− 30_C
21
T_C = −30_C
60
20
25_C
50
19
85_C
40
η_D
18
30
17
25_C
16
15
1
85_C
10
G_ps
20
V_DD = 28 Vdc
I_DQ = 950 mA
10
f = 880 MHz
0
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
10⁹
21
20
19
18
17
16 V ^{20 V}
V_DD = 12 V
16
0
50
100
32 V
28 V
24 V
I_DQ = 950 mA
f = 880 MHz
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9125NR1 MRF6S9125NBR1
8
RF Device Data
Freescale Semiconductor