MRF6S9125NR1_06 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, I_DQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
−20 _{Two −Tone Measurements}
− 30
− 40
3rd Order
− 50
5th Order
− 60
7th Order
− 70
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
− 10
V_DD = 28 Vdc, P_out = 125 W (PEP)
I_DQ = 950 mA, Two −Tone Measurements
−20 ^{(f1 + f2)/2 = Center Frequency of 880 MHz}
3rd Order
− 30
5th Order
− 40
−50 _{7th Order}
− 60
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
Ideal
55
P3dB = 52.4 dBm (172.5 W)
54
P1dB = 51.5 dBm (139.3 W)
53
52
Actual
51
50
V_DD = 28 Vdc, I_DQ = 950 mA
49
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
48
28 29 30 31 32 33 34 35 36
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
50
V_DD = 28 Vdc, I_DQ = 950 mA
f = 880 MHz, N−CDMA IS−95 (Pilot
40 ^{Sync, Paging, Traffic Codes 8}
Through 13)
30
20
10
25_C
G_ps
25_C
T_C = −30_C
− 30
25_C
η_D
ALT1 ^−40
85_C
− 30_C
− 50
25_C
85_C _−60
− 30_C
ACPR
− 70
0
85_C
− 80
0.1
1
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
7