MRF6S9125NR1_06 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20.5
34
20.3
20 η_D
19.8
19.5
19.3
32
G_ps
30
V_DD = 28 Vdc, P_out = 27 W (Avg.)
28
I_DQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
− 30
−5
IRL _−40
− 10
19
ACPR −50
− 15
18.8
− 60
− 20
ALT1
18.5
− 70
− 25
850 860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P_out = 27 Watts Avg.
19.6
52
G_ps
19.4
48
19.2 η_D
19
18.8
V_DD = 28 Vdc, P_out = 62.5 W (Avg.)
I_DQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
44
40
− 30
−5
18.6
ACPR −40
− 10
18.4
IRL
− 50
− 15
18.2
ALT1 _−60
− 20
18
− 70
− 25
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P_out = 62.5 Watts Avg.
22
I_DQ = 1475 mA
21
1187 mA
20 _{950 mA}
19
712 mA
475 mA
18
17
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
16
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
−20 ^{Two −Tone Measurements}
I_DQ = 1425 mA ^{712 mA}
− 30
475 mA
− 40
− 50
1187 mA
950 mA
− 60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9125NR1 MRF6S9125NBR1
6
RF Device Data
Freescale Semiconductor