MRF6S9125NR1_06 Datasheet, PDF (13/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

EDGE CHARACTERIZATION
5
4.5 V_DD = 28 Vdc
4 ^{IDQ = 700 mA}
3.5
3
P_out = 70 W Avg.
2.5
2
60 W Avg.
1.5
1
20 W Avg.
0.5
0
900 910 920 930 940 950 960 970 980 990
f, FREQUENCY (MHz)
Figure 19. EVM versus Frequency
15
V_DD = 28 Vdc
12
I_DQ = 700 mA
f = 943 MHz
EDGE Modulation
9
6
75
T_C = 25_C
EVM
60
45
η_D
30
3
15
0
0
1
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 20. EVM and Drain Efficiency versus
Output Power
− 52.5
V_DD = 28 Vdc, I_DQ = 700 mA
f = 943 MHz, EDGE Modulation
SR @ 400 kHz
− 60
P_out = 70 W Avg.
60 W Avg.
20 W Avg.
− 67.5
SR @ 600 kHz
− 75
70 W Avg.
60 W Avg.
− 82.5
900 910
920 930 940 950
f, FREQUENCY (MHz)
20 W Avg.
960 970 980
Figure 21. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 45
−48 ^{VDD = 28 Vdc}
I_DQ = 700 mA
−51 _{f = 943 MHz}
−54 ^{EDGE Modulation}
− 57
T_C = 25_C
− 60
− 63
− 66
− 69
− 72
− 75
0
22.5
45
67.5
90
112.5
135
P_out, OUTPUT POWER (WATTS)
Figure 22. Spectral Regrowth at 400 kHz
versus Output Power
− 53
−56 ^{VDD = 28 Vdc}
I_DQ = 700 mA
−59 f = 943 MHz
−62 ^{EDGE Modulation}
− 65
− 68
T_C = 25_C
− 71
− 74
− 77
− 80
− 83
0
22.5
45
67.5
90
112.5
135
P_out, OUTPUT POWER (WATTS)
Figure 23. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
13