MRF6S9125NR1_06 Datasheet, PDF (15/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 980 MHz
Z_load
f = 900 MHz
Z_o = 5 Ω
f = 980 MHz
Z_source
f = 900 MHz
V_DD = 28 Vdc, I_DQ = 700 mA, P_out = 60 W Avg.
f
MHz
Z_source
W
Z_load
W
900
1.04 - j2.65
1.66 - j0.56
905
1.04 - j2.60
1.66 - j0.50
910
1.03 - j2.55
1.67 - j0.43
915
1.02 - j2.51
1.68 - j0.37
920
1.01 - j2.46
1.68 - j0.31
925
1.01 - j2.41
1.69 - j0.24
930
1.00 - j2.36
1.70 - j0.18
935
0.98 - j2.32
1.70 - j0.12
940
0.97 - j2.27
1.71 - j0.05
945
0.96 - j2.22
1.72 - j0.00
950
0.95 - j2.17
1.73 + j0.07
955
0.94 - j2.12
1.74 + j0.14
960
0.94 - j2.08
1.76 + j0.20
965
0.93 - j2.03
1.77 + j0.26
970
0.93 - j1.99
1.79 + j0.32
975
0.92 - j1.94
1.80 + j0.39
980
0.92 - j1.90
1.82 + j0.45
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
15