MRF6S9125NR1_06 Datasheet, PDF (3/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V_DD = 28 Vdc, I_DQ = 700 mA,
P_out = 60 W Avg., 921 - 960 MHz, EDGE Modulation
Power Gain
G_ps
—
20
—
Drain Efficiency
η_D
—
40
—
Error Vector Magnitude
EVM
—
1.8
—
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V_DD = 28 Vdc, I_DQ = 700 mA, P_out = 125 W,
921 - 960 MHz
Power Gain
Drain Efficiency
Input Return Loss
G_ps
—
19
—
η_D
—
62
—
IRL
—
- 12
—
P_out @ 1 dB Compression Point, CW
(f = 880 MHz)
P1dB
—
125
—
Unit
dB
%
% rms
dBc
dBc
dB
%
dB
W
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
3