MRF6S9125NR1_06 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
R_θJC
0.44
0.45
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 400 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 950 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.74 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 8 Adc)
Dynamic Characteristics ⁽³⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
1
2.1
3
Vdc
V_GS(Q)
2
2.89
4
Vdc
V_DS(on)
0.05
0.23
0.3
Vdc
g_fs
—
6
—
S
C_rss
—
2
—
pF
C_oss
—
60
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 950 mA, P_out = 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR
= 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
19
20.2
24
dB
Drain Efficiency
η_D
29
31
—
%
Adjacent Channel Power Ratio
ACPR
—
- 47.1
- 45
dBc
Input Return Loss
IRL
—
- 16
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(continued)
MRF6S9125NR1 MRF6S9125NBR1
2
RF Device Data
Freescale Semiconductor