MRF6S21100HR3 Datasheet, PDF (8/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2200 MHz
Z_load
f = 2080 MHz
Z_o = 10 Ω
f = 2200 MHz _Zsource
f = 2080 MHz
V_DD = 28 Vdc, I_DQ = 950 mA, P_out = 23 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2080
2110
2.44 - j6.3
2.25 - j6.1
1.83 - j3.0
1.74 - j2.8
2140
2.09 - j5.8
1.61 - j2.6
2170
1.98 - j5.6
1.59 - j2.5
2200
1.85 - j5.4
1.52 - j2.3
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100HR3 MRF6S21100HSR3
8
RF Device Data
Freescale Semiconductor