MRF6S21100HR3 Datasheet, PDF (11/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 30
3−Carrier TD−SCDMA
−35 ^{VDD = 28 V, IDQ = 800 mA}
f = 2017.5 MHz
− 40
η_D
Adj −L
18
15
Adj −U
12
− 45
9
− 50
6
Alt − L
− 55
3
Alt − U
− 60
0
0 1 2 3 4 5 6 7 89
P_out, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
− 30
18
6−Carrier TD−SCDMA
− 35
V_DD = 28 V, I_DQ = 800 mA
f = 2017.5 MHz
η_D
15
− 40
− 45
Adj −L
− 50
Alt − U
− 55
12
Adj −U
9
Alt − L
6
3
− 60
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
P_out, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
− 30
1.28 MHz
− 30
1.28 MHz
− 40
Channel BW _{VBW = 300 kHz}
− 40
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
Sweep Time = 200 ms
− 50
RBW = 30 kHz
− 50
RBW = 30 kHz
− 60
− 60
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
− 100
− 100
− 110
−ALT1 in
− 120
1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
1.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
− 110
−ALT1 in
− 120
1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
2.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
11