MRF6S21100HR3 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 23 W Avg., and η_D = 27.6%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAK −TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
+20
3.84 MHz
+30
Channel BW
0
− 10
− 20
− 30
− 40
− 50
−60 _{−IM3 in}
−ACPR in +ACPR in
3.84 MHz BW 3.84 MHz BW
−70 ^{3.84 MHz BW}
− 80
−25 −20 −15 −10 −5 0 5 10
f, FREQUENCY (MHz)
+IM3 in
3.84 MHz BW
15 20 25
Figure 14. 2-Carrier W-CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
7