MRF6S21100HR3 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 20
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 950 mA
−25 Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
− 30
3rd Order
− 35
−40 _{5th Order}
− 45
−50 ^{7th Order}
− 55
− 60
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
56
P3dB = 51.5 dBm (141 W)
54
P1dB = 50.9 dBm (123 W)
52
50
Ideal
Actual
48
46
V_DD = 28 Vdc, I_DQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
44
28
30
32
34
36
38
40
42
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
50
V_DD = 28 Vdc, I_DQ = 950 mA
f1 = 2135 MHz, f2 = 2145 MHz
40 _{2−Carrier W−CDMA, 10 MHz Carrier Spacing}
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
30
20
10
− 10
η_D
− 20
IM3
− 30
ACPR
− 40
G_ps
− 50
0
0.4
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
− 60
100
18
60
16 ^Gps
50
14
40
12
30
10
20
8
η_D
6
1
V_DD = 28 Vdc
I_DQ = 950 mA
10
f = 2140 MHz
0
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21100HR3 MRF6S21100HSR3
6
17
16
15
32 V
14
V_DD = 24 V
28 V
13
I_DQ = 950 mA, f = 2140 MHz
12
0 20 40 60 80 100 120 140 160 180
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor