MRF6S21100HR3 Datasheet, PDF (12/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
Z_load
f = 2070 MHz
f = 1950 MHz
Z_source
f = 2070 MHz
f = 1950 MHz
f
MHz
V_DD = 28 Vdc, I_DQ = 800 mA
Z_source
W
Z_load
W
1950
1.04 - j4.28
1.38 - j3.90
1960
1.07 - j4.31
1.41 - j3.92
1970
0.96 - j4.13
1.29 - j3.71
1980
0.82 - j3.71
1.12 - j3.34
1990
0.79 - j3.34
1.07 - j2.96
2000
0.82 - j3.15
1.08 - j2.75
2010
0.88 - j3.16
1.12 - j2.76
2020
0.84 - j3.30
1.11 - j2.86
2030
0.83 - j3.47
1.12 - j3.01
2040
0.91 - j3.71
1.22 - j3.20
2050
0.91 - j3.90
1.25 - j3.34
2060
0.81 - j3.81
1.15 - j3.27
2070
0.76 - j3.45
1.09 - j2.92
Z_source = Device input impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 22. Series Equivalent Source and Load Impedance — TD - SCDMA
MRF6S21100HR3 MRF6S21100HSR3
12
RF Device Data
Freescale Semiconductor