MRF6S21100HR3 Datasheet, PDF (5/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16.2
28
16
V_DD = 28 Vdc
P_out = 23 W (Avg.)
I_DQ = 950 mA
15.8
IM3 −U
15.6
15.4 ^{IM3 −L}
ACPR −U
2−Carrier W−CDMA
10 MHz Carrier Spacing
η_D
27
G_ps
− 36
− 38
− 10
IRL
− 40
− 20
15.2
− 42
− 30
ACPR −L
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
15
− 44
− 40
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 23 Watts Avg.
15.6
44
η_D
15.4 _{VDD = 28 Vdc}
42
P_out = 55 W (Avg.)
15.2 ^IDQ ^{= 950 mA}
40
2−Carrier W−CDMA, 10 MHz Carrier Spacing ^Gps
15 _IRL
3.84 MHz Channel Bandwidth
IM3 −L
− 24
− 10
14.8
IM3 −U
− 26
− 20
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.6
ACPR −U
− 28
− 30
14.4
ACPR −L
− 30
− 40
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 55 Watts Avg.
17.5
17 I_DQ = 1450 mA
16.5
1200 mA
16
950 mA
15.5
700 mA
15
14.5
14
13.5
1
450 mA
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 20
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
−25 Two −Tone Measurements, 10 MHz Tone Spacing
− 30
−35 ^{IDQ = 450 mA}
1450 mA ^{1200 mA}
− 40
− 45
950 mA
− 50
700 mA
− 55
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
5