MRF6S21100HR3 Datasheet, PDF (14/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
7
Date
Jan. 2007
Description
• Added “TD - SCDMA” to data sheet description paragraph, p. 1
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9 - 12
• Added Product Documentation and Revision History, p. 14
MRF6S21100HR3 MRF6S21100HSR3
14
RF Device Data
Freescale Semiconductor