MRF6S18100NR1_08 Datasheet, PDF (8/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 2020 MHz
Z_load
f = 2020 MHz
Z_source
f = 1900 MHz
f = 1900 MHz
V_DD = 28 Vdc, I_DQ = 900 mA, P_out = 100 W
f
MHz
Z_source
W
Z_load
W
1900
1930
1960
1990
2020
2.80 - j4.53
2.71 - j4.27
2.63 - j4.03
2.56 - j3.79
2.51 - j3.57
1.75 - j3.52
1.67 - j3.25
1.59 - j2.99
1.52 - j2.74
1.47 - j2.51
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance — 1930 - 1990 MHz
MRF6S18100NR1 MRF6S18100NBR1
8
RF Device Data
Freescale Semiconductor