MRF6S18100NR1_08 Datasheet, PDF (1/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 900 mA,
P_out = 100 Watts, f = 1990 MHz
Power Gain — 14.5 dB
Drain Efficiency — 49%
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 700 mA,
P_out = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930- 1990 MHz)
Power Gain — 15 dB
Drain Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18100N
Rev. 2, 12/2008
MRF6S18100NR1
MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF6S18100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_C
T_J
Symbol
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Value ^(2,3)
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 CW
Case Temperature 77°C, 40 CW
R_θJC
0.51
0.62
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
1