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MRF6S18100NR1_08 Datasheet, PDF (2/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
â
IDSS
â
IGSS
â
â
10
μAdc
â
1
μAdc
â
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
Dynamic Characteristics(1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1.6
2
3
Vdc
VGS(Q)
1.5
2.8
3.5
Vdc
VDS(on)
â
0.24
â
Vdc
Crss
â
1.5
â
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1990 MHz
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
47
49
â
%
Input Return Loss
IRL
â
- 12
-9
dB
Pout @ 1 dB Compression Point
P1dB
100
110
â
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg.,
1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation
Power Gain
Gps
â
15
â
dB
Drain Efficiency
ηD
â
35
â
%
Error Vector Magnitude
EVM
â
2
â
% rms
Spectral Regrowth at 400 kHz Offset
SR1
â
- 63
â
dBc
Spectral Regrowth at 600 kHz Offset
SR2
â
- 76
â
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805 - 1880 MHz
Power Gain
Gps
â
14.5
â
dB
Drain Efficiency
ηD
â
49
â
%
Input Return Loss
IRL
â
- 12
â
dB
Pout @ 1 dB Compression Point
1. Part internally matched both on input and output.
P1dB
â
110
â
W
MRF6S18100NR1 MRF6S18100NBR1
2
RF Device Data
Freescale Semiconductor
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