MRF6S18100NR1_08 Datasheet, PDF (13/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 1900 MHz
Z_load
f = 1780 MHz
f = 1900 MHz
Z_source
f = 1780 MHz
V_DD = 28 Vdc, I_DQ = 900 mA, P_out = 100 W
f
MHz
Z_source
W
Z_load
W
1780
1804
1840
1880
1900
1.96 - j4.09
1.90 - j3.86
1.82 - j3.53
1.76 - j3.16
1.72 - j2.97
1.94 - j2.90
1.88 - j2.67
1.80 - j2.42
1.73 - j1.99
1.70 - j1.82
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 25. Series Equivalent Source and Load Impedance — 1805 - 1880 MHz
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
13