MRF6S18100NR1_08 Datasheet, PDF (7/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
10⁴
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 100 W, and η_D = 49%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
GSM TEST SIGNAL
−10
Reference Power
−20
−30
−40
−50
−60
−70
400 kHz
−80
600 kHz
−90
−100
−110
Center 1.96 GHz
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
200 kHz
400 kHz
600 kHz
Span 2 MHz
Figure 14. EDGE Spectrum
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
7