MRF6S18100NR1_08 Datasheet, PDF (11/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1805 - 1880 MHz
17
60
η_D
16
50
0
15
40
−10
G_ps
14
30
−20
IRL
13
20
−30
V_DD = 28 Vdc
I_DQ = 900 mA
12
10
−40
1800 1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 100 Watts
16
IRL
G_ps
15
η_D
50
−10
40
−20
14
30
−30
V_DD = 28 Vdc
I_DQ = 900 mA
13
20
−40
1800 1810 1820 1830 1840 1850 1860 1870 1880
f, FREQUENCY (MHz)
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 40 Watts
6
V_DD = 28 Vdc
I_DQ = 700 mA
5
4
P_out = 60 W Avg.
3
2
1
1800
42 W Avg.
25 W Avg.
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 20. EVM versus Frequency
RF Device Data
Freescale Semiconductor
10
V_DD = 28 Vdc
I_DQ = 700 mA
8 f = 1840 MHz
EDGE Modulation
6
4
50
40
30
η_D
T_C = 25_C
20
2
EVM
10
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 21. EVM and Drain Efficiency versus
Output Power
MRF6S18100NR1 MRF6S18100NBR1
11