MRF6S18100NR1_08 Datasheet, PDF (5/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
17
η_D
16
IRL
15
G_ps
60
0
50
−10
40
−20
14
30
−30
V_DD = 28 Vdc
I_DQ = 900 mA
13
20
−40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 100 Watts
17
60
0
16
IRL
50
−10
15
40
−20
G_ps
14
η_D
30
−30
V_DD = 28 Vdc
I_DQ = 900 mA
13
20
−40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 40 Watts
16
I_DQ = 1350 mA
15 _{1125 mA}
900 mA
14
665 mA
13
450 mA
12
11
1
V_DD = 28 Vdc
f = 1960 MHz
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
16
14
12
32 V
10
28 V
8
6
V_DD = 24 V
4
I_DQ = 900 mA
f = 1960 MHz
2
0
20 40 60 80 100 120 140 160
P_out, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
5