MRF1570T1 Datasheet, PDF (8/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS, 400 - 470 MHz
17
15
400 MHz
13
440 MHz
470 MHz
11
9
7
V_DD = 12.5 Vdc
5
0
10
20 30
40 50
60 70 80
P_out, OUTPUT POWER (WATTS)
Figure 15. Gain versus Output Power
70
470 MHz
60
400 MHz
440 MHz
50
40
30
20
10
V_DD = 12.5 Vdc
0
0 10 20 30 40 50 60 70 80
P_out, OUTPUT POWER (WATTS)
Figure 16. Drain Efficiency versus Output Power
90
80
470 MHz
440 MHz
400 MHz
70
60
V_DD = 12.5 Vdc
P_in = 38 dBm
50
400
600
800
1000
1200
1400
1600
I_DQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Biasing Current
100
80
470 MHz
400 MHz
60
440 MHz
40
20
V_DD = 12.5 Vdc
P_in = 38 dBm
0
400
600
800
1000
1200
1400
1600
I_DQ, BIASING CURRENT (mA)
Figure 18. Drain Efficiency versus Biasing Current
100
90
400 MHz
470 MHz
80
440 MHz
70
60
50
P_in = 38 dBm
I_DQ = 800 mA
40
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 19. Output Power versus Supply Voltage
100
80
60
400 MHz
440 MHz
470 MHz
40
20
P_in = 38 dBm
I_DQ = 800 mA
0
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 20. Drain Efficiency versus Supply Voltage
MRF1570T1 MRF1570FT1
8
RF Device Data
Freescale Semiconductor