MRF1570T1 Datasheet, PDF (5/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS, 135 - 175 MHz
18
17
155 MHz
16
175 MHz
135 MHz
15
V_DD = 12.5 Vdc
14
13
12
10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
70
155 MHz
60
175 MHz
50
135 MHz
40
30
V_DD = 12.5 Vdc
20
10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS)
Figure 6. Drain Efficiency versus Output Power
90
80
135 MHz
155 MHz
175 MHz
70
60
V_DD = 12.5 Vdc
P_in = 36 dBm
50
400
600
800
1000 1200
1400 1600
I_DQ, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
100
80
155 MHz
175 MHz
60
135 MHz
40
20
V_DD = 12.5 Vdc
P_in = 36 dBm
0
400
600
800
1000 1200
1400 1600
I_DQ, BIASING CURRENT (mA)
Figure 8. Drain Efficiency versus Biasing Current
100
80
135 MHz
60 ^{175 MHz}
155 MHz
40
20
P_in = 36 dBm
I_DQ = 800 mA
0
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
100
80
155 MHz
175 MHz
60
135 MHz
40
20
P_in = 36 dBm
I_DQ = 800 mA
0
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 10. Drain Efficiency versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
5