MRF1570T1 Datasheet, PDF (12/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 135 MHz
Z_OL*
f = 175 MHz
f = 135 MHz ^Zin
f = 400 MHz
f = 470 MHz
Z_in
f = 400 MHz
Z_OL*
f = 470 MHz
f = 175 MHz
Z_o = 5 Ω
Z_o = 5 Ω
f = 520 MHz
Z_OL*
f = 450 MHz
f = 450 MHz
Z_in
f = 520 MHz
V_DD = 12.5 V, I_DQ = 0.8 A, P_out = 70 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135
2.8 +j0.05 0.65 +j0.42
155
3.9 +j0.34 1.01 +j0.63
175
2.4 - j0.47 0.71 +j0.37
V_DD = 12.5 V, I_DQ = 0.8 A, P_out = 70 W
f
Z_in
MHz
Ω
Z_OL*
Ω
400 0.92 - j0.71 1.05 - j1.10
440
1.12 - j1.11 0.83 - j1.45
470 0.82 - j0.79 0.59 - j1.43
V_DD = 12.5 V, I_DQ = 0.8 A, P_out = 70 W
f
Z_in
MHz
Ω
Z_OL*
Ω
450 0.94 - j1.12 0.61 - j1.14
470 1.03 - j1.17 0.62 - j1.12
500 0.95 - j1.71 0.75 - j1.03
520 0.62 - j1.74 0.77 - j0.97
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Notes: Impedance Z_in was measured with input terminated at 50 W.
Impedance Z_OL was measured with output terminated at 50 W.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 31. Series Equivalent Input and Output Impedance
MRF1570T1 MRF1570FT1
12
RF Device Data
Freescale Semiconductor