MRF1570T1 Datasheet, PDF (11/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS, 450 - 520 MHz
15
450 MHz
14 _{470 MHz}
500 MHz
13 _{520 MHz}
12
11
10
V_DD = 12.5 Vdc
9
0 10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS)
Figure 25. Gain versus Output Power
70
60
500 MHz
520 MHz
50
450 MHz
470 MHz
40
30
V_DD = 12.5 Vdc
20
10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS)
Figure 26. Drain Efficiency versus Output Power
90
80
80 _{450 MHz}
470 MHz
70 500 MHz
520 MHz
60
50
400
V_DD = 12.5 Vdc
P_in = 38 dBm
800
1200
1600
I_DQ, BIASING CURRENT (mA)
Figure 27. Output Power versus Biasing Current
100
90
80
70 _{450 MHz}
470 MHz
60 _{500 MHz}
520 MHz
50
40
P_in = 38 dBm
I_DQ = 800 mA
30
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 29. Output Power versus Supply Voltage
70
520 MHz
60 ^{500 MHz}
470 MHz
50 _{450 MHz}
V_DD = 12.5 Vdc
P_in = 38 dBm
40
400
800
1200
1600
I_DQ, BIASING CURRENT (mA)
Figure 28. Drain Efficiency versus Biasing Current
80
70
520 MHz
500 MHz
60 _{470 MHz}
450 MHz
50
P_in = 38 dBm
I_DQ = 800 mA
40
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 30. Drain Efficiency versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
11