MRF1570T1 Datasheet, PDF (18/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

2X
A
P
aaa M D A B
5
4X b2
6
aaa M D B
D1
7
4X
b1 8
aaa M D B
PACKAGE DIMENSIONS
E1
B
E2
1
2
(b1)
2X
b3
D
4X
e
3
4X
e1
4
8
7
D2
6
5
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
DRAIN ID
NOTE 6
4
3
bbb C A B
2
1
E
E3
Y
q
DATUM
PLANE
H
L
c1
MRF1570T1 MRF1570FT1
18
C
SEATING
PLANE
A
Y
D SEATING
PLANE
A1
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. DRAIN
A2
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. GATE
7. GATE
8. SOURCE (COMMON)
CASE 1366 - 04
ISSUE D
TO - 272- 8 WRAP
PLASTIC
MRF1570T1
E3
VIEW Y - Y
NOTES:
1. CONTROLLING DIMENSION: INCH .
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS b1 AND b2 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
6. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
INCHES
DIM MIN MAX
A 0.098 0.108
A1 0.000 0.004
A2 0.100 0.104
D 0.928 0.932
D1 0.810 BSC
D2 0.608 BSC
E 0.296 0.304
E1 0.248 0.252
E2 0.170 BSC
E3 0.241 0.245
L 0.060 0.070
P 0.126 0.134
b1 0.088 0.094
b2 0.066 0.072
b3 0.067 0.073
c1 0.007 0.011
e
0.104 BSC
e1 0.210 BSC
q 0_ 6_
aaa
0.004
bbb
0.008
MILLIMETERS
MIN MAX
2.49 2.74
0.00 0.10
2.54 2.64
23.57 23.67
20.57 BSC
15.44 BSC
7.52 7.72
6.30 6.40
4.32 BSC
6.12 6.22
1.52 1.78
3.20 3.40
2.24 2.39
1.68 1.83
1.70 1.85
0.178 0.279
2.64 BSC
5.33 BSC
0_ 6_
0.10
0.20
RF Device Data
Freescale Semiconductor