MRF1570T1 Datasheet, PDF (19/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

2X
A
E1
P
aaa M D A B
B
E2
5
3X
e2
4X b2
6
aaa M D B
D1
7
4X
b1
aaa M D B
8
aaa M D B
1
2
3
4
3X b
2X _(b1)
b3
4X
e
4X
e1
D D2
b4
8
7
6
5
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
DRAIN ID
NOTE 5
4
3
2
1
bbb C A B
4X
E
VIEW Y - Y
c1
D
SEATING
PLANE
A
Y
F
ZONE "J"
Y
A1
6 A2
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. DRAIN
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. GATE
7. GATE
8. SOURCE (COMMON)
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS 0.006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
4. DIMENSIONS "b" AND "b1" DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE "b1" AND "b2" DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
5. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
INCHES
DIM MIN MAX
A 0.098 0.106
A1 0.038 0.044
A2 0.040 0.042
D 0.926 0.934
D1 0.810 BSC
D2 0.608 BSC
E 0.492 0.500
E1 0.246 0.254
E2 0.170 BSC
F
0.025 BSC
P 0.126 0.134
b 0.105 0.111
b1 0.088 0.094
b2 0.066 0.072
b3 0.067 0.073
b4 0.077 0.083
c1 0.007 0.011
e
0.104 BSC
e1 0.210 BSC
e2 0.229 BSC
aaa
0.004
bbb
0.008
MILLIMETERS
MIN MAX
2.49 2.69
0.96 1.12
1.02 1.07
23.52 23.72
20.57 BSC
15.44 BSC
12.50 12.70
6.25 6.45
4.32 BSC
0.64 BSC
3.20 3.40
2.67 2.82
2.24 2.39
1.68 1.83
1.70 1.85
1.96 2.11
0.178 0.279
2.64 BSC
5.33 BSC
5.82 BSC
0.10
0.20
CASE 1366A - 02
ISSUE C
TO - 272- 8
PLASTIC
MRF1570FT1
RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
19