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MRF1570T1 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 0.8 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF Characteristics (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Symbol
Min Typ Max
Unit
IDSS
—
—
1
μA
VGS(th)
1.0
—
3
Vdc
VDS(on)
—
—
1
Vdc
Ciss
Coss
Crss
—
—
500
pF
—
—
250
pF
—
—
35
pF
Gps
dB
10
—
—
η
%
50
—
—
MRF1570T1 MRF1570FT1
2
RF Device Data
Freescale Semiconductor