BC3770 Datasheet, PDF (8/45 Pages) Freescale Semiconductor, Inc – 2.0 A Switch-Mode Charger

Table 4. BC3770 Electrical Characteristics (continued)
Characteristics noted under conditions: V_VBUS = 5.0 V, V_BATREG = 3.7 V, V_VIO = 1.8 V, C_VBUS = C_PMID = 2.2 F, C_VSYS = 10 F,
C_CHGOUT = 4.7 F, C_VL = 1.0 F, L = 1.0 H, T_A = - 40 °C to 85 °C *). Typical values are at T_A = 25°C, unless otherwise noted. ⁽⁶⁾
Symbol
Characteristic
Min
Typ
Max
Unit
Notes
Power Switches
R_{DS(on)_Q1}
R_{DS(on)_Q2}
R_{DS(on)_Q3}
R_{DS(on)_Q4}
Reverse Blocking MOSFET On-resistance
• Q1 FET
Internal High-side MOSFET On-resistance
• Q2 FET
Internal Low-side MOSFET On-resistance
• Q3 FET
CHGOUT to VSYS MOSFET On-resistance
• Q4 FET
—
50
—
m
—
50
—
m
—
70
—
m
—
30
—
m
VSYS Output
VSYS Min. Regulation Voltage in I_{IN_LIM}  I_VSYS
V_{VSYS_MIN}
• In both Trickle and pre-charge mode (V_BATREG < V_{VSYS_MIN}),
3.5
3.6
3.71
V
I_SYS = 500 mA
V_{VSYS_MIN_OLP}
VSYS Min Regulation Voltage in I_{IN_LIM} < I_VSYS (VSYS overloaded)
• VSYS falling in VSYS overloaded in VBUSOK = 1
3.3
3.4
—
V
V_{VSYS_MAX}
SYS Max Regulation Voltage
• In VBUSOK = 1, I_{SYS_LOAD} = 0 mA, I_CHG = 1.5 A
VSYSOK Threshold
• VSYS rising in VBUSOK = 1, VSYSOK bit set to 1
—
V_BATREG +
I_CHG *
R_{DSON_Q4}
V_BATREG +
0.1 V
V
3.4
3.5
3.61
V
(8)
VSYSNG Threshold
• VSYS falling, VSYSNG bit set to 1
3.2
3.3
—
V
(8)
V_{SYS_REVERSE}
Ideal Diode Regulation Voltage
• VSYS falling below BATREG, I_{SYS_LOAD} = 3.0 A
—
V_BATREG - V_BATREG -
50 mV
75 mV
V
(8)
_VSYSLOAD
Load Regulation in Transition
• I_SYS = 1.0 mA to 1.0 A in t_R = 20 s
V_BATREG - V_BATREG -
0.2
0.1
—
V
(8)
V_{SYS_UVLO}
VSYS Undervoltage Lockout Threshold
• VSYS falling, 200 mV Hysteresis
2.3
2.4
2.5
V
t_DIODE-ON
t_{DIODE_OFF}
Battery Charger
Ideal Diode Turn-on Time
Ideal Diode Turn-off Time
—
10
—
s
—
10
—
s
V_{BATREG_RNG}
BATREG Programmable Voltage Range
• Programmable in 25 mV steps
4.1
—
4.475
V
V_{BAT_REG}
Voltage Accuracy
• I_{FAST_CHG} = 0 mA, set to 4.2 V and 4.35 V at V_BATREG
T_A = 25 °C
T_A = -40 to 85
-0.5
—
0.5
%
-1.0
—
1.0
V_RCH
Recharge Threshold
• V_BATREG - V_{BAT_REG}
—
-100
—
mV
Notes
8. Guaranteed by design, characterization, and correlation with process controls. Not fully tested in production.
9. Designed and simulated according to I²C specifications except general call support.
10. The regulation in boost is only guaranteed in the operation range.
Analog Integrated Circuit Device Data
Freescale Semiconductor
BC3770
8