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33486A Datasheet, PDF (7/30 Pages) Freescale Semiconductor, Inc – Dual High-Side Switch for H-Bridge Applications
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 9.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TJ ≤ 150°C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TJ = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
OVERLOAD PROTECTION
High-Side Overcurrent Shutdown Delay (7)
Low-Side Over Load Detection (VOUT - GND) Shutdown Delay (8)
t ILIM
–
t OUT-FAULT
–
OUTPUT TIMING
High-/ Low-Speed Mode to Low-/ High-Speed Mode Transition Pulse Width
t SMOD
150
Gate Low-Side Rise Time in High Speed Mode
From 10% to 90% VOUT, Load = 3.3 nF and 10 Ω
t PSRLS
–
Gate Low-Side Fall Time in High Speed Mode
From 90% to 10% VOUT, Load = 3.3 nF and 10 Ω
t NSRLS
–
3.0
3.0
250
3.6
0.25
20
µs
10
µs
350
µs
µs
–
µs
–
HIGH-SPEED MODE
High-Side Positive Slew Rate
From 10% to 65% VOUT, Load = 3.0 Ω
High-Side Negative Slew Rate
From 90% to 35% VOUT, Load = 3.0 Ω
High-Side Turn-On Delay Time
To 10% VOUT, Load = 3.0 Ω
High-Side Turn-Off Delay Time
To 90% VOUT, Load = 3.0 Ω
t HR
V/µs
–
10
–
t HF
V/µs
–
40
–
t HDON
µs
–
2.5
–
t HDOFF
µs
–
1.5
–
LOW-SPEED MODE
High-Side Maximum Output Positive Slew Rate
From 10% to 65% VOUT, Load = 3.0 Ω
High-Side Maximum Output Negative Slew Rate
From 90% to 35% VOUT, Load = 3.0 Ω
High-Side Turn On Delay TIme
To 10% VOUT, Load = 3.0 Ω
High-Side Turn Off Delay Time
To 90% VOUT, Load = 3.0 Ω
tLR
V/µs
–
1.0
–
tLF
V/µs
–
0.5
–
tLDON
µs
–
10
–
tLOFF
µs
–
80
–
Notes
7. Time between fault occurrence and output shutdown.
8. Time between fault occurrence and gate low-side (GLS) shutdown.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33486A
7