MC9S08AC60 Datasheet, PDF (54/348 Pages) Freescale Semiconductor, Inc – Microcontrollers

Chapter 4 Memory
2. The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
START
0
FACCERR ?
1
CLEAR ERROR
WRITE TO FCDIV⁽¹⁾
0
FCBEF ?
1
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
(1) _{Only required once}
after reset.
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF ⁽²⁾
(2) _{Wait at least four bus cycles before}
checking FCBEF or FCCF.
YES
FPVIO OR
FACCERR ?
YES
NO
NEW BURST COMMAND ?
NO
ERROR EXIT
0
FCCF ?
1
DONE
Figure 4-3. FLASH Burst Program Flowchart
MC9S08AC60 Series Data Sheet, Rev. 2
54
Freescale Semiconductor