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MC9S12P64CFT Datasheet, PDF (519/566 Pages) Freescale Semiconductor, Inc – Microcontrollers | |||
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Electrical Characteristics
A.3.1.3 Erase Verify P-Flash Section (FCMD=0x03)
The maximum time to erase verify a section of P-Flash depends on the number of phrases being veriï¬ed
(NVP) and is given by:
t â (450 + NVP) â
f---N---V----M1----B---U---S
A.3.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by:
t
=
400
â
----------1----------
f NVMBUS
A.3.1.5 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words and the two seven-bit ECC ï¬elds is
dependent on the bus frequency, fNVMBUS, as well as on the NVM operating frequency, fNVMOP.
The typical phrase programming time is given by:
tppgm
â
164
â
-f--N---V---1-M----O---P-
+
2000
â
----------1----------
f NVMBUS
The maximum phrase programming time is given by:
tppgm
â
164
â
---------1---------
f NVMOP
+
2500
â
f---N---V----M1----B---U---S
A.3.1.6 Program Once (FCMD=0x07)
The maximum time required to program a P-Flash Program Once ï¬eld is given by:
t
â
164
â
-f--N---V---1-M----O---P-
+
2150
â
----------1----------
f NVMBUS
A.3.1.7 Erase All Blocks (FCMD=0x08)
The time required to erase all blocks is given by:
tmass
â
100100
â
---------1---------
f NVMOP
+
70000
â
-f--N---V----M1----B---U---S
S12P-Family Reference Manual, Rev. 1.13
Freescale Semiconductor
519
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