MC9S08QD4 Datasheet, PDF (191/202 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
Table A-10. ADC Characteristics (continued)
Characteristic
Conditions
Symb
Min
Typ¹
Max
Unit
Comment
Zero-Scale Error
10 bit mode
8 bit mode
0
±1.5
±3.1
E_ZS
0
±0.5
±0.7
LSB V_ADIN = V_SSA
Full-Scale Error
10 bit mode
8 bit mode
0
±1.0
±1.5
E_FS
0
±0.5
±0.5
LSB V_ADIN = V_DDA
Quantization Error 10 bit mode
E_Q
—
—
±0.5
LSB
8 bit mode is
not truncated
1 _{Typical values assume VDDAD = 5.0 V, Temp = 25°C, fADCK=1.0 MHz unless otherwise stated. Typical values are for reference}
only and are not tested in production.
2 _{At 4 MHz, for maximum frequency, use proportionally lower source impedance.}
A.10 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-11. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40°C to 125°C
V_prog/erase
2.7
5.5
V
Supply voltage for read operation
Internal FCLK frequency¹
V_Read
2.7
f_FCLK
150
5.5
V
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time²
Mass erase time⁽²⁾
Program/erase endurance³
T_L to T_H = –40°C to + 125°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
10,000
9
4
4000
20,000
—
100,000
6.67
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08QD4 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
191