SI4539DY Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics: P-Channel (continued)
10
I _D = -5A
8
6
V_DS= -5V
-10V
-15V
4
2
0
0
2
4
6
8
10
12
Q _g , GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
2000
1000
500
C iss
Coss
200
Crss
100 f = 1 MHz
V_GS = 0 V
50
0.1
0.3
1
3
10
30
-V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
100
10
RDS(ON) ^LIMIT
1
V_GS = -10V
0.1 _{SINGLE PULSE}
100us
1ms
10ms
100ms
1s
D1C0s
RθJA = 135°C/W
TAA = 25°C
0.01
0.1 0.2
0.5 1
2
5
10 20
50
-V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 20. Single Pulse Maximum Power
Dissipation.
Si4539DY Rev. A