SI4539DY Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter
Conditions
Type Min Typ Max Units
t_D(on)
Turn - On Delay Time
t_r
Turn - On Rise Time
V_DS = 10 V, I _D = 1 A
V_GS = 10 V , R_GEN = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
8
16 ns
11 20
14 25 ns
10 18
t_D(off)
Turn - Off Delay Time
t_f
Turn - Off Fall Time
V_DS = -10 V, I _D = -1 A
V_GS = -10 V , R_GEN = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
23 37 ns
90 125
9
18 ns
55 80
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DS = 10 V, I _D = 7 A,
V_GS = 10 V
V_DS = -10 V, I _D = -5 A,
V_GS = -10 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
18 26 nC
19 27
3.2
nC
3.5
4.3
nC
3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I_S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
1.3
A
-1.3 A
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 1.3 A (Note 2)
N-Ch
0.75 1.2
V
V_GS = 0 V, I_S = -1.3 A (Note 2)
P-Ch
-0.75 -1.2 V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by
design while R_θCA is determined by the user's board design.
a. 78^OC/W on a 0.5 in²
pad of 2oz copper.
b. 125^OC/W on a 0.02 in²
pad of 2oz copper.
c. 135^OC/W on a 0.003 in²
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
Si4539DY Rev. A