SI4539DY Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics: N-Channel (continued)
10
I _D = 7A
8
6
V_DS= 5V
10V
15V
4
2
0
0
2
4
6
8
10
12
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2000
1200
800
400
Ciss
Coss
200
f = 1 MHz
100
Crss
V_GS = 0 V
50
0.1 0.2
0.5
1
2
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
30
10
RDS(ON) ^LIMIT
5
2
1
0.5
VGS =10V
0.1 _{SINGLE PULSE}
0.05 _{R θJA= 135° C/W}
TA A = 25°C
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1 0.2
0.5 1
2
5
10
30 50
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
Si4539DY Rev. A