SI4539DY Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics: P-Channel
30
V_GS = -10V -7.0V
-5.5V
24
- 5.0V
-4.5V
18
-4.0V
12
-3.5V
6
-3.0V
0
0
1
2
3
4
5
6
- V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.8
I_D = 5A
1.6 ^V GS ^{= 10V}
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
50
V_DS = -5V
40
30
T_J = -55°C
25°C
125°C
20
10
0
0
2
4
6
8
10
-V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
2.4
2
V_GS = - 3.5V
-4.0 V
1.6
-4.5 V
-5.0 V
1.2
-6.0V
-8.0V
-10V
0.8
0
5
10
15
20
- ID , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.15
0.1
0.05
0
0
I _D = -2.0A
125°C
25°C
2
4
6
8
10
-V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
60
V_GS= 0V
10
1
TJ= 125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4539DY Rev. A