SI4539DY Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BV_DSS
Drain-Source Breakdown Voltage
∆BV_DSS/∆T_J ^{Breakdown Voltage Temp. Coefficient}
I_DSS
Zero Gate Voltage Drain Current
I_GSSF
Gate - Body Leakage, Forward
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = -250 µA
I_D = 250 µA, Referenced to 25 ^oC
I_D = -250 µA, Referenced to 25 ^oC
V_DS = 24 V, V_GS = 0 V
V_DS = -24 V, V_GS = 0 V
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
V_GS(th)
Gate Threshold Voltage
∆V_GS(th)/∆T_J ^{Gate Threshold Voltage Temp. Coefficient}
R_DS(ON)
Static Drain-Source On-Resistance
I_D(on)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = -250 µA
I_D = 250 µA, Referenced to 25 ^oC
I_D = -250 µA, Referenced to 25 ^oC
V_GS = 10 V, I_D = 7.0 A
V_GS = 4.5 V, I_D = 6.0 A
V_GS = -10 V, I_D = -5.0 A
V_GS = -4.5 V, I_D = - 4.0 A
V_GS = 10 V, V_DS = 5 V
V_GS = -10 V, V_DS = -5 V
V_DS = 5 V, I _D = -7 A
V_DS = -5 V, I _D = -5 A
C_iss
Input Capacitance
V_DS = 15 V, V_GS = 0 V,
f = 1.0 MHz
C_oss
Input Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = -15 V, V_GS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
N-Ch 30
V
P-Ch -30
N-Ch
30
V
mV/^oC
P-Ch
-25
N-Ch
1
µA
P-Ch
-1 µA
All
100 nA
All
-100 nA
N-Ch 1
1.7 3
V
P-Ch -1 -1.5 -3
V
N-Ch
-4.4
mV/^oC
P-Ch
3.2
N-Ch
0.024 0.028 _Ω
0.035 0.04
P-Ch
0.044 0.052
0.068 0.08
N-Ch 20
A
P-Ch -20
N-Ch
15
S
P-Ch
8
S
N-Ch
650
pF
P-Ch
730
N-Ch
345
pF
P-Ch
400
N-Ch
90
pF
P-Ch
90
Si4539DY Rev. A