SI4539DY Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics: N-Channel
30
V_GS
= 10V
5.5V
24
4.5V
18
4.0V
12
3.5V
6
3.0V
0
0
1
2
3
4
5
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 7A
1.6 ^V GS ^{= 10V}
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
30
VDS = 10V
25
20
15
10
T = 125°C
5
J
25°C
-55°C
0
1
2
3
4
5
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2
V_GS = 4.0V
1.6
4.5 V
5.0V
1.2
6.0 V
7.0V
10V
0.8
0
6
12
18
24
30
I_D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
0.12
0.09
0.06
0.03
0
2
I D = 3A
T_A = 125°C
T_A = 25°C
4
6
8
10
V _GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V_GS= 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4539DY Rev. A