FGH75T65UPD Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Current Derating
180
150
120
90
60
30
0
0 25 50 75 100 125 150 175 200
Case temperature, T_C [^oC]
Figure 21. Forward Characteristics
300
100
T_C = 175^oC
10
T_C = 125^oC
T_C = 75^oC
T_C = 25^oC
1
0
1
2
3
4
Forward Voltage, V_F [V]
Figure 23. Stored Charge
0.7
T_C = 25^oC
0.6 _{TC = 175}o_C
0.5
200A/µs
0.4
di/dt = 100A/µs
0.3
0.2
0.1
0.0
0
200A/µs
di/dt = 100A/µs
20
40
60
80
Forwad Current, I_F [A]
Figure 20. Load Current Vs. Frequence
180
T_C = 100^oC
150
120
90
60 ^{Duty cycle : 50%}
T
C
=
100^oC
Power Dissipation = 187W
30
V_CC = 400V
load Current : peak of square wave
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 22. Reverse Recovery Current
11
10 ^TC ^{= 25oC}
T_C = 175^oC
8
di/dt = 200A/µs
6
100A/µs
4
di/dt = 200A/µs
2
100A/µs
0
0 10 20 30 40 50 60 70 80
IC [A]
Figure 24. Reverse Recovery Time
200
T_C = 25^oC
T_C = 175^oC
160
di/dt = 100A/µs
120
200A/µs
80
di/dt = 100A/µs
200A/µs
40
0
20
40
60
80
Forward Current, I_F [A]
FGH75T65UPD Rev. C0
7
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