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FGH75T65UPD Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT
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Package Marking and Ordering Information
Device Marking
FGH75T65UPD
Device
FGH75T65UPD
Package
TO-247
Eco Status
-
Pacing Type
-
Qty per Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 75mA, VCE = VGE
IC = 75A, VGE = 15V
IC = 75A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 75A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
VGE = 15V, VCC < 400V,
Rg = 10 Ω
650
-
-
V
-
0.65
-
V/oC
-
-
250
µA
-
-
±400
nA
4.0
6.0
7.5
V
-
1.65
2.3
V
-
2.05
-
V
-
5665
-
pF
-
205
-
pF
-
100
-
pF
-
32
42
ns
-
43
56
ns
-
166
216
ns
-
24
33
ns
-
2.85
3.68
mJ
-
1.20
1.60
mJ
-
4.05
5.3
mJ
-
30
-
ns
-
57
-
ns
-
176
-
ns
-
21
-
ns
-
4.45
-
mJ
-
1.60
-
mJ
-
6.05
-
mJ
5
-
-
us
FGH75T65UPD Rev. C0
2
www.fairchildsemi.com
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