FGH75T65UPD Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
5000
Figure 14. Turn-on Characteristics vs.
Collector Current
500
1000
t_d(off)
100
10
0
t_f
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
1000
100
t_d(off)
t_f
10
1
0
Common Emitter
V_GE = 15V, R_G = 3Ω
T_C = 25^oC
T_C = 175^oC
30
60
90
120
150
Collector Current, I_C [A]
Figure 17. Switching Loss vs.
Collector Current
50
10
1
0.1
0
E_on
Common Emitter
E_off
V_GE = 15V, R_G = 3Ω
T_C = 25^oC
T_C = 175^oC
30
60
90
120
150
Collector Current, I_C [A]
100
t_r
10
1
0
t_d(on)
Common Emitter
V_GE = 15V, R_G = 3Ω
T_C = 25^oC
T_C = 175^oC
30
60
90
120
150
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Gate Resistance
100
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
T_C = 25^oC
T_C = 175^oC
E_on
10
E_off
1
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switching
SOA Characteristics
250
200
150
100
50
Safe Operating Area
V_GE = 15V, T_C < 175^oC
0
0 100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
FGH75T65UPD Rev. C0
6
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