FGH75T65UPD Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225
V_GE= 20V _15V
12V
180
135
Figure 2. Typical Output Characteristics
225
V_GE= 20V
15V
180
12V
135
90
10V
45
8V
T_C = 25^oC
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
225
200
175
150
125
100
75
50
25
0
0
Common Emitter
V_GE = 15V
T_C = 25^oC
T_C = 175^oC
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
VGE = 15V
3.0
150A
2.5
2.0
75A
1.5
I_C = 40A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, TC [^oC]
90
10V
45
8V
T_C = 175^oC
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
225
Common Emitter
V_CE = 400V
180 T_C = 25^oC
T_C = 175^oC
135
90
45
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
16
12
75A
8
I_C = 40A
4
Common Emitter
T_C = -40^oC
150A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGH75T65UPD Rev. C0
4
www.fairchildsemi.com