FGH75T65UPD Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Q_g
Total Gate Charge
Q_ge
Gate to Emitter Charge
Q_gc
Gate to Collector Charge
Test Conditions
V_CE = 400V, I_C = 75A,
V_GE = 15V
Min.
-
-
-
Typ.
385
45
210
Max
578
68
315
Units
nC
nC
nC
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 50A
T_C = 25^oC
T_C = 175^oC
E_rec
Reverse Recovery Energy
T_C = 175^oC
t_rr
Diode Reverse Recovery Time
I_F =50A, dI_F/dt = 200A/µs
T_C = 25^oC
T_C = 175^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 175^oC
Min.
-
-
-
-
-
-
-
Typ.
2.1
1.7
40
65
127
120
550
Max
2.6
-
-
85
-
170
-
Units
V
uJ
ns
nC
FGH75T65UPD Rev. C0
3
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