FGH75T65UPD Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

August 2012
FGH75T65UPD
650V, 75A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : T_J = 175^oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: V_CE(sat) = 1.65V(Typ.) @ I_C = 75A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Short Circuit Ruggedness > 5us @25^oC
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum perfor-
mance for Solar Inverter , UPS and Digital Power Generator
where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM(1)
P_D
SCWT
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
FGH75T65UPD Rev. C0
C
G
E
Ratings
650
± 20
150
75
225
75
50
225
375
187
5
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
us
o_C
o_C
o_C
Typ.
-
-
-
Max.
0.40
0.86
40
Units
o_C/W
o_C/W
o_C/W
www.fairchildsemi.com