FGH75T65UPD Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 650V, 75A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
150A
12
75A
8
I_C = 40A
4
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
10000
C_ies
1000
C_oes
Common Emitter
100 ^{VGE = 0V, f = 1MHz}
C_res
T_C = 25^oC
50
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
500
10µs
100
100µs
10
1ms
10 ms
DC
1 *Notes:
1. T_C = 25^oC
2. T_J < 175^oC
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
16
12
75A
150A
8
I_C = 40A
4
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
12
400V
200V
V_CC = 300V
9
6
3
Common Emitter
T_C = 25^oC
0
0
70 140 210 280 350 420
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 75A
T_C = 25^oC
T_C = 175^oC
t_d(on)
100
t_r
10
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGH75T65UPD Rev. C0
5
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