FGH25T120SMD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
600
T_C = 25^oC
500 ^TC ^{= 175oC}
di/dt = 100A/μs
400
di/dt = 200A/μs
300
200
3000
2500
T_C = 25^oC
T_C = 175^oC
2000
di/dt = 200A/μs
1500
1000
di/dt = 100A/μs
100
0
0
di/dt = 100A/μs
di/dt = 200A/μs
10
20
30
40
50
Forward Current, I_F [A]
500
0
0
di/dt = 200A/μs di/dt = 100A/μs
10
20
30
40
50
Forward Current, I_F [A]
Figure 21. Transient Thermal Impedance of IGBT
0.5
0.5
0.1 0.3
0.01
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
2
1
0.5
0.3
0.1
0.1 _0.05
0.02
0.01
0.01
single pulse
0.005
10^-5
10^-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
10^-3
10^-2
10^-1
10⁰
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
7
FGH25T120SMD Rev. C2
www.fairchildsemi.com