FGH25T120SMD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
1000
100
t_d(off)
t_f
10 _{Common Emitter}
V_GE = 15V, R_G = 23Ω
T_C = 25^oC
T_C = 175^oC
1
0
10
20
30
40
50
Collector Current, I_C [A]
Figure 15. Load Current vs. Frequency
200
V_CE = 600V
Load current : peak of square Wave
150
Duty cycle : 50%
T = 100oC
c
Power Dissipation =167 W
100
50
T_C = 100^oC
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 17. Forward Characteristics
100
T_C = 175^oC
10
T_C = 25^oC
1
0
1
2
3
4
5
Forward Voltage, V_F [V]
Figure 14. Swithcing Loss vs.
Collector Current
100
Common Emitter
V_GE = 15V, R_G = 23Ω
T_C = 25^oC
10 ^TC ^{= 175oC}
E_on
1
E_off
0.1
0
10
20
30
40
50
Collector Current, I_C [A]
Figure 16. SOA Characteristics
500
I MAX(Pulse)
C
100
10μs
10
I MAX(Continuous)
C
DC Operation
1
100μs
1ms
10ms
0.1
0.01
1
Single Nonrepetitive
Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 18. Reverse Recovery Current
16
T_C = 25^oC
14 _{TC = 175}^o_C
12
10
di/dt = 200A/μs
8
di/dt = 100A/μs
6
di/dt = 200A/μs
4
di/dt = 100A/μs
2
0
10
20
30
40
50
Forward Current, I_F [A]
©2013 Fairchild Semiconductor Corporation
6
FGH25T120SMD Rev. C2
www.fairchildsemi.com